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FDAF59N30

Fairchild Semiconductor
Part Number FDAF59N30
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 3, 2007
Detailed Description FDAF59N30 300V N-Channel MOSFET October 2006 FDAF59N30 300V N-Channel MOSFET Features • 34A, 300V, RDS(on) = 0.056Ω @V...
Datasheet PDF File FDAF59N30 PDF File

FDAF59N30
FDAF59N30

Overview
FDAF59N30 300V N-Channel MOSFET October 2006 FDAF59N30 300V N-Channel MOSFET Features • 34A, 300V, RDS(on) = 0.
056Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power suppli...


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