DatasheetsPDF.com

FDS8817NZ

Fairchild Semiconductor
Part Number FDS8817NZ
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 4, 2007
Detailed Description FDS8817NZ N-Channel PowerTrench® MOSFET March 2007 FDS8817NZ N-Channel 30V, 15A, 7.0mΩ Features PowerTrench® tm MOS...
Datasheet PDF File FDS8817NZ PDF File

FDS8817NZ
FDS8817NZ

Overview
FDS8817NZ N-Channel PowerTrench® MOSFET March 2007 FDS8817NZ N-Channel 30V, 15A, 7.
0mΩ Features PowerTrench® tm MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
„ Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 10mΩ at VGS = 4.
5V, ID =12.
6A „ HBM ESD protection level of 3.
8kV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant D D D D G S S Pin 1 S D S www.
DataSheet4U.
com D D D G S S SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 4) (Note 1a) (Note 1b) (Note 1a) Ratings 30 ±20 15 60 181 2.
5 1.
0 -55 to +150 Units V V A mJ W °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) (Note 1b) 25 50 125 °C/W Package Marking and Ordering Information Device Marking FDS8817NZ Device FDS8817NZ Reel Size 13” Tape Width 12mm Quantity 2500 units ©2007 Fairchild Semiconductor Corporation FDS8817NZ Rev.
C 1 www.
fairchildsemi.
com FDS8817NZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250μA, VGS = 0V ID = 250μA, referenced to 25°C VDS ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)