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FDW2508PB

Fairchild Semiconductor
Part Number FDW2508PB
Manufacturer Fairchild Semiconductor
Description Dual P-Channel MOSFET
Published May 4, 2007
Detailed Description FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET October 2006 FDW2508PB Dual P-Channel –1.8V Specified Pow...
Datasheet PDF File FDW2508PB PDF File

FDW2508PB
FDW2508PB

Overview
FDW2508PB Dual P-Channel –1.
8V Specified PowerTrench® MOSFET October 2006 FDW2508PB Dual P-Channel –1.
8V Specified PowerTrench® MOSFET –12V, –6A, 18mΩ Features General Description This P-Channel –1.
8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®.
It has been optimized for battery power management applications.
„ Max rDS(on) = 18mΩ at VGS = –4.
5V, ID = –6A „ Max rDS(on) = 22mΩ at VGS = –2.
5V, ID = –5A „ Max rDS(on) = 30mΩ at VGS = –1.
8V, ID = –4A „ Low gate charge „ High performance trench technology for extremely low rDS(on) „ Low profile TSSOP-8 package „ RoHS compliant Application „ Power management „ Load switch „ Battery protection www.
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