DatasheetsPDF.com

FQI5N50C

Fairchild Semiconductor
Part Number FQI5N50C
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 4, 2007
Detailed Description FQB5N50C/FQI5N50C QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode pow...
Datasheet PDF File FQI5N50C PDF File

FQI5N50C
FQI5N50C

Overview
FQB5N50C/FQI5N50C QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TM Features • • • • • • 5A, 500V, RDS(on) = 1.
4 Ω @VGS = 10 V Low gate charge ( typical 18nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D Swww.
DataSheet4U.
com FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB5N50C/FQI5N50C 500 5 2.
9 20 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 300 5 7.
3 4.
5 73 0.
58 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.
71 40 62.
5 Units °C/W °C/W °C/W ©2003 Fairchild Semiconductor Corporation Rev.
A, August 2003 FQB5N50C/FQI5N50C Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characte...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)