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FQB8N60CF

Fairchild Semiconductor
Part Number FQB8N60CF
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 4, 2007
Detailed Description FQB8N60CF 600V N-Channel MOSFET December 2005 FRFET FQB8N60CF 600V N-Channel MOSFET Features • 6.26A, 600V, RDS(on) = ...
Datasheet PDF File FQB8N60CF PDF File

FQB8N60CF
FQB8N60CF

Overview
FQB8N60CF 600V N-Channel MOSFET December 2005 FRFET FQB8N60CF 600V N-Channel MOSFET Features • 6.
26A, 600V, RDS(on) = 1.
5 Ω @VGS = 10 V • Low gate charge ( typical 28nC) • Low Crss ( typical 12pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplie...


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