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FQPF6N40CF

Fairchild Semiconductor
Part Number FQPF6N40CF
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 4, 2007
Detailed Description FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET February 2006 FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features • 6...
Datasheet PDF File FQPF6N40CF PDF File

FQPF6N40CF
FQPF6N40CF

Overview
FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET February 2006 FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features • 6A, 400V, RDS(on) = 1.
1 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 70ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
D G G DS TO-220 FQP Series GD S www.
DataSheet4U.
com TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current Parameter Drain-Source Voltage - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds FQP6N40CF 6 3.
6 24 FQPF6N40CF 400 6* 3.
6* 24* ± 30 270 6 73 4.
5 Units V A A A V mJ A mJ V/ns 73 0.
58 -55 to +150 300 38 0.
3 W W/°C °C °C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FQP6N40CF 1.
71 0.
5 62.
5 FQPF6N40CF 3.
31 -62.
5 Units °C/W °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com FQP6N40CF/FQPF6N40CF Rev.
B FQP6N40CF/FQPF6N40CF 400V...


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