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CEA6861

CET
Part Number CEA6861
Manufacturer CET
Description P-Channel Enhancement Mode Field Effect Transistor
Published May 6, 2007
Detailed Description CEA6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = ...
Datasheet PDF File CEA6861 PDF File

CEA6861
CEA6861

Overview
CEA6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -2.
4A, RDS(ON) = 135mΩ @VGS = -10V.
RDS(ON) = 180mΩ @VGS = -4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D D S D G SOT-89 G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -60 Units V V A A W C ±20 -2.
4 -10 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W Details are subject to change without notice .
1 Rev 1.
2006.
Sep http://www.
cetsemi.
com CEA6861 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Ch...


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