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CEM4301

CET
Part Number CEM4301
Manufacturer CET
Description P-Channel Enhancement Mode Field Effect Transistor
Published May 6, 2007
Detailed Description CEM4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -6A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65m...
Datasheet PDF File CEM4301 PDF File

CEM4301
CEM4301

Overview
CEM4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -6A, RDS(ON) = 42mΩ @VGS = -10V.
RDS(ON) = 65mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D 8 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -40 Units V V A A W C ±20 -6 -20 2.
5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, ...


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