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H11AA1-M

Fairchild Semiconductor
Part Number H11AA1-M
Manufacturer Fairchild Semiconductor
Description (H11AAx-M) AC Input/Phototransistor Optocouplers
Published May 7, 2007
Detailed Description H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers April 2006 H11AA1-M, H11AA2-M, H11AA3-M, ...
Datasheet PDF File H11AA1-M PDF File

H11AA1-M
H11AA1-M

Overview
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers April 2006 H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers Features ■ Bi-polar emitter input ■ Built-in reverse polarity input protection ■ Underwriters Laboratory (UL) recognized File Description The H11AAX-M series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
#E90700, Volume 2 ■ VDE approved File #102497 (ordering option ‘V’) Applications ■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface Package and Schematic 1 6 BASE 2 5 COLL 3 4 EMITTER ©2006 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com H11AAX-M Rev.
1.
0.
0 H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers Absolute Maximum Ratings (TA =25°C Unless otherwise specified) Symbol TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF IF(pk) PD DETECTOR IC PD Continuous Collector Current Detector Power Dissipation Derate linearity from 25°C All All 50 150 1.
76 mA mW mW/°C Continuous Forward Current Forward Current – Peak (1µs pulse, 300 pps) LED Power Dissipation Derate Linearly From 25°C All All All 60 ±1.
0 120 1.
41 mA A mW mW/°C Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation Derate Linearly From 25°C All All All All -40 to +150 -40 to +100 260 for 10 sec 250 2.
94 °C °C °C mW mW/°C Parameter Device Value Units Electrical Characteristics (TA = 25°C Unless otherwise specified.
) Individual Component Characteristics Symbol EMITTER VF CJ Input Forward Voltage Capacitance Breakdown Voltage Collector to Emitter Collector to Base Emitter to Base Emitter to Collector Leakage Current Collector to Emitter Capacitance Collector to Emitter Collector to Base Emitter to Base IF = ±10mA VF = 0 V, f = 1.
0MHz All All 1.
17 80 1.
5 V pF Parameter Test Conditions Device Min.
Typ.
* Max.
Unit DETECTOR BVCEO BVCBO BVEB...


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