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CEF10N4

CET
Part Number CEF10N4
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CEF10N4 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 450V ,5.6A ,RDS(ON)= 700mΩ @V...
Datasheet PDF File CEF10N4 PDF File

CEF10N4
CEF10N4

Overview
CEF10N4 Sep.
2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 450V ,5.
6A ,RDS(ON)= 700mΩ @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole.
G D 6 G D S TO-220F S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous -Pulsed ID IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range PD TJ, TSTG Limit 450 30 5.
6 17 5.
6 45 0.
36 -55 to 150 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 6-107 2.
8 65 C/W C/W CEF10N4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Symbol DRAIN-SOURCE AVALANCHE RATINGa Condition Min Typ Max Unit Single Pulse Drain-Source 6 Aval...


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