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CEP12P10

CET
Part Number CEP12P10
Manufacturer CET
Description P-Channel MOSFET
Published May 7, 2007
Detailed Description CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315mΩ @VGS = -10V. S...
Datasheet PDF File CEP12P10 PDF File

CEP12P10
CEP12P10

Overview
CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315mΩ @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -100 Units V V A A W W/ C C ±30 -11 -44 75 0.
5 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2 62.
5 Units C/W C/W 2005.
August 1 http://www.
cetsemi.
com CEP12P10/CEB12P10 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero...


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