DatasheetsPDF.com

CEP41A2

CET
Part Number CEP41A2
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CEP41A2/CEB41A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 40A, RDS(ON) =20mΩ @VGS = 4.5V. RDS(ON)...
Datasheet PDF File CEP41A2 PDF File

CEP41A2
CEP41A2


Overview
CEP41A2/CEB41A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 40A, RDS(ON) =20mΩ @VGS = 4.
5V.
RDS(ON) =30mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 40 120 60 0.
4 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
5 62.
5 Units C/W C/W 2005.
June 4 - 82 http://www.
cetsemi.
com CEP41A2/CEB41A2 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 20A VDS = 10V, ID = 20A, VGS = 4.
5V VDD = 10 V, ID = 1A, VGS = 4.
5V, RGEN =6Ω 20 20 72 20 15 2 3 40 1.
3 40 40 130 40 20 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.
5V, ID = 20A VGS = 2.
5V, ID = ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)