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CEF9060R

CET
Part Number CEF9060R
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CEP9060R/CEB9060R CEF9060R N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9060R CEB9060R CEF9060R V...
Datasheet PDF File CEF9060R PDF File

CEF9060R
CEF9060R


Overview
CEP9060R/CEB9060R CEF9060R N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9060R CEB9060R CEF9060R VDSS 55V 55V 55V RDS(ON) 10.
5mΩ 10.
5mΩ 10.
5mΩ ID 100A 100A 100A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package & TO-220F full-pak for through hole.
D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 TO-220F VDS VGS ID IDM PD EAS IAS TJ,Tstg f Units V V 55 ±20 100 300 200 1.
3 480 50 -55 to 175 100 300 75 0.
5 480 50 e e A A W W/ C mJ A C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 0.
75 62.
5 Limit 2 65 Units C/W C/W 2004.
September 4 - 182 http://www.
cetsemi.
com CEP9060R/CEB9060R CEF9060R Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 62A VDS = 44V, ID = 62A, VGS = 10V VDD = 28V, ID = 62A, VGS = 10V, RGEN = 4.
5Ω 37 18 67 16 60 16 21 62 1.
3 75 45 ...


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