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CED12P10

CET
Part Number CED12P10
Manufacturer CET
Description P-Channel MOSFET
Published May 7, 2007
Detailed Description CED12P10/CEU12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -9A, RDS(ON) = 315mΩ @VGS = -10V. ...
Datasheet PDF File CED12P10 PDF File

CED12P10
CED12P10

Overview
CED12P10/CEU12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -9A, RDS(ON) = 315mΩ @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -100 Units V V A A W W/ C C ±30 -9 -36 50 0.
4 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range ...


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