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CED12N10

CET
Part Number CED12N10
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CED12N10/CEU12N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 180mΩ @VGS = 10V. Sup...
Datasheet PDF File CED12N10 PDF File

CED12N10
CED12N10

Overview
CED12N10/CEU12N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 180mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D G D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100 Units V V A A W W/ C C ±20 11 44 43 0.
29 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.
5 50 Units C/W C/W 2005.
August 1 http://www.
cetsemi.
com CED12N10/CEU12N10 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Ze...


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