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CED20N06

CET
Part Number CED20N06
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CED20N06/CEU20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 20A, RDS(ON) = 55mΩ @VGS = 10V. RDS(O...
Datasheet PDF File CED20N06 PDF File

CED20N06
CED20N06

Overview
CED20N06/CEU20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 20A, RDS(ON) = 55mΩ @VGS = 10V.
RDS(ON) = 75mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60 Units V V A A W W/ C C ±20 20 60 60 0.
4 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and St...


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