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CED2303

CET
Part Number CED2303
Manufacturer CET
Description P-Channel MOSFET
Published May 7, 2007
Detailed Description CED2303/CEU2303 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -9A, RDS(ON) = 200mΩ @VGS = -10V. RDS(...
Datasheet PDF File CED2303 PDF File

CED2303
CED2303

Overview
CED2303/CEU2303 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -9A, RDS(ON) = 200mΩ @VGS = -10V.
RDS(ON) = 320mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D PRELIMINARY D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30 Units V V A A W W/ C C ±20 -9 -27 33 0.
22 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 4.
5 50 Units C/W C/W 2004.
November 6 - 46 http://www.
cetsemi.
com CED2303/CEU2303 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -4.
5A VDS = -15V, ID = -4.
5A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 10 10 20 6 6 0.
8 1.
5 -9 -1.
5 20 20 35 20 10 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = -250µA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µ...


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