DatasheetsPDF.com

CEU21A2

CET
Part Number CEU21A2
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CED21A2/CEU21A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 20A, RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON...
Datasheet PDF File CEU21A2 PDF File

CEU21A2
CEU21A2

Overview
CED21A2/CEU21A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 20A, RDS(ON) = 40mΩ @VGS = 4.
5V.
RDS(ON) = 70mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 20 60 38 0.
25 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 4 50 Units C/W C/W 2003.
July 6 - 38 http://www.
cetsemi.
com CED21A2/CEU21A2 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 4A VDS = 10V, ID = 8A, VGS = 4.
5V VDD = 10V, ID = 1A, VGS = 4.
5V, RGEN = 6Ω 20 12 50 10 11 3.
6 2.
8 20 1.
3 50 30 100 25 15 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.
5V, ID = 8A VGS = 2.
5V, ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)