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CEU20P06

CET
Part Number CEU20P06
Manufacturer CET
Description P-Channel MOSFET
Published May 7, 2007
Detailed Description CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 105mΩ @VGS = -10V. R...
Datasheet PDF File CEU20P06 PDF File

CEU20P06
CEU20P06

Overview
CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 105mΩ @VGS = -10V.
RDS(ON) = 150mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -60 Units V V A A W W/ C C ±20 -13 -40 42 0.
29 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operatin...


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