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CED41A2

CET
Part Number CED41A2
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CED41A2/CEU41A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 36A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON...
Datasheet PDF File CED41A2 PDF File

CED41A2
CED41A2

Overview
CED41A2/CEU41A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 36A, RDS(ON) = 20mΩ @VGS = 4.
5V.
RDS(ON) = 30mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 36 100 43 0.
29 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.
5 50 Units C/W C/W Rev 1.
2005.
May 6 - 62 http://www.
cetsemi.
com CED41A2/CEU41A2 Electrical Characteristics Parameter Off Characteristics ...


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