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CED51A3

CET
Part Number CED51A3
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CED51A3/CEU51A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 35A, RDS(ON) = 14mΩ(typ) @VGS = 10V. RD...
Datasheet PDF File CED51A3 PDF File

CED51A3
CED51A3

Overview
CED51A3/CEU51A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 35A, RDS(ON) = 14mΩ(typ) @VGS = 10V.
RDS(ON) = 21mΩ(typ) @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 35 140 50 0.
33 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operatin...


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