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CED61A2

CET
Part Number CED61A2
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CED61A2/CEU61A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON...
Datasheet PDF File CED61A2 PDF File

CED61A2
CED61A2

Overview
CED61A2/CEU61A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 45A, RDS(ON) = 14mΩ @VGS = 4.
5V.
RDS(ON) = 24mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D PRELIMINARY D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 45 140 48 0.
38 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
6 50 Units C/W C/W 2004.
November 6 - 94 http://www.
cetsemi.
com CED61A2/CEU61A2 Electrical Characteristics Parameter Off Charact...


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