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CED85A3

CET
Part Number CED85A3
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CED85A3/CEU85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 80A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) ...
Datasheet PDF File CED85A3 PDF File

CED85A3
CED85A3


Overview
CED85A3/CEU85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 80A, RDS(ON) = 6mΩ @VGS = 10V.
RDS(ON) = 9mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 25 Units V V A A W W/ C C ±20 80 320 70 0.
56 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
8 50 Units C/W C/W Rev 1.
2005.
September 1 http://www.
cetsemi.
com CED85A3/CEU85A3 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 20A 0.
82 VDS = 15V, ID = 16A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 15 4 45 8 17 6 5 50 1.
2 30 10 90 20 22 ns ns ns ns nC nC nC A V VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 30A VGS = 4.
5V, ID = 30A 1 5.
0 7.
5 2325 330 175 3 6.
0 9.
0 V mΩ mΩ pF pF pF BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 25V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 25 1 100 -100 V µA Tc = 25 C unless...


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