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SLD-1026Z

Part Number	SLD-1026Z
Manufacturer	Sirenza Microdevices
Description	3 Watt Discrete LDMOS Device Plastic Surface Mount Package
Published	May 10, 2007
Detailed Description	Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS tra...
Datasheet	SLD-1026Z PDF File

Overview

Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz.
It is an excellent solution for applications requiring high linearity and efficiency at a low cost.
The SLD-1026Z is typically used in the design of driver stages for power amplifiers, repeaters, and RFID applications.
The power transistor is fabricated using Sirenza’s latest, high performance LDMOS II process.
This product features a RoHS/WEEE Compliant package with matte tin finish, designated by the ‘Z’ suffix.
Pb RoHS Compliant & Green Package 3 Watt Discrete LDMOS Device Plastic Surface Mount Package Functional Schematic Diagram ESD Protection Proprietary SOF-26 Package Product Features • • • • • • • • • • • • 3 Watt Output P1dB Single Polarity Supply Voltage High Gain: 19 dB at 915 MHz High Efficiency: 44% at 3W CW XeMOS II LDMOS Proprietary Low Thermal Resistance Package Integrated ESD Protection, Class 1B Base Station PA driver Repeaters RFID Military Communication GSM / EDGE / CDMA / WCDMA Applications Backside Paddle = Ground RF Specifications Symbol Frequency Gain Gain Efficiency Efficiency IRL IRL Parameter Frequency of Operation 3 Watt CW, 902-928 MHz 3 Watt CW, 2110-2170 MHz Drain Efficiency at 3 Watt CW , 915MHz Drain Efficiency at 3 Watt CW , 2140MHz Input Return Loss, 3 Watt Output Power, 915MHz Input Return Loss, 3 Watt Output Power, 2140 MHz 3rd Order IMD at 3 Watt PEP (Two Tone), 915MHz Linearity 3rd Order IMD at 3 Watt PEP (Two Tone), 2140MHz 1dB Compression (P1dB), 915 MHz 1dB Compression (P1dB), 2140 MHz ACP at 0.
3 Watt output, 2140MHz, 10 MHz carrier separation, 3GPP2, Test model 1, 64 DPCH, 67% Clipping, PAR= 9.
3 @ 0.
01% CCDF IM3 at 0.
3 Watt, 2140MHz output, 10 MHz carrier separation, 3GPP2, Test model 1, 64 DPCH, 67% Clipping, PAR= 9.
3 @ 0.
01% CCDF Thermal Resistance (Junction-to-Case) VDS = 28.
0V, IDQ = 50mA, TFlange = 25ºC Unit MHz dB dB % % dB dB dBc dBc Watt W...

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SLD-1026Z 3 Watt Discrete LDMOS Device Plastic Surface Mount Package - Sirenza Microdevices

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