DatasheetsPDF.com

17N80C3

Infineon Technologies
Part Number 17N80C3
Manufacturer Infineon Technologies
Description SPP17N80C3
Published May 10, 2007
Detailed Description CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current...
Datasheet PDF File 17N80C3 PDF File

17N80C3
17N80C3


Overview
CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPP17N80C3 800 V 0.
29 Ω 88 nC PG-TO220-3 CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.
e.
active clamp forward ) Type SPP17N80C3 Package PG-TO220-3 Marking 17N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C=100 °C T C=25 °C I D=3.
4 A, V DD=50 V I D=17 A, V DD=50 V V DS=0…640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M3 and M3.
5 screws Rev.
2.
91 page 1 Value 17 11 51 670 0.
5 17 50 ±20 ±30 227 -55 .
.
.
150 60 Unit A mJ A V/ns V W °C Ncm 2011-09-27 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt SPP17N80C3 Value 17 51 4 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded Soldering temperature, wave soldering only allowed at leads T sold 1.
6 mm (0.
063 in.
) from case for 10s min.
Values typ.
Unit max.
- - 0.
55 K/W - - 62 - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold vo...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)