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BTD1768A3

Cystech Electonics
Part Number BTD1768A3
Manufacturer Cystech Electonics
Description NPN Epitaxial Planar Transistor
Published May 11, 2007
Detailed Description CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Spec. No. : C304A3 Issued Date : 20...
Datasheet PDF File BTD1768A3 PDF File

BTD1768A3
BTD1768A3

Overview
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Spec.
No.
: C304A3 Issued Date : 2003.
07.
28 Revised Date :2017.
05.
16 Page No.
: 1/6 Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application.
Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.
) • High collector current, IC(max)=1A (DC) • Pb-free lead plating and halogen-free package Symbol BTD1768A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Ordering Information Device BTD1768A3-X-TB-G BTD1768A3-X-BK-G Package TO-92 (Pb-free lead plating and halogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTD1768A3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C304A3 Issued Date : 2003.
07.
28 Revised Date :2017.
05.
16 Page No.
: 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD RθJA Tj Tstg Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Limits 150 80 7 1 2 (Note) 750 167 -55~+150 -55~+150 Unit V V V A A mW °C/W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VCE(SAT) *VBE(SAT) *hFE 1 *hFE 2 fT Cob Min.
150 80 5 120 60 - Typ.
0.
15 100 20 Max.
100 100 0.
3 0.
5 1.
2 560 - Unit V V V nA nA V V V MHz pF Test Conditions IC=50μA IC=1mA IE=50μA VCB=150V, IE=0 VEB=7V, IC=0 IC=500mA, IB=20mA IC=1A, IB=50mA IC=1A, IB=50mA VCE=3V...


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