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FMS2003QFN-1

Filtronic
Part Number FMS2003QFN-1
Manufacturer Filtronic
Description High Power Reflective GaAs SP4T Switch
Published May 11, 2007
Detailed Description Preliminary Data Sheet 2.1 FMS2003QFN-1 High Power Reflective GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packa...
Datasheet PDF File FMS2003QFN-1 PDF File

FMS2003QFN-1
FMS2003QFN-1

Overview
Preliminary Data Sheet 2.
1 FMS2003QFN-1 High Power Reflective GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.
9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels High isolation: >30dB at 0.
9GHz Low Insertion loss: 0.
5dB at 0.
9GHz Low control current Functional Schematic ANT RF1 RF2 RF3 RF4 Description and Applications: The FMS2003QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications.
The die is fabricated using the Filtronic FL05 0.
5µm switch process technology, which offers excellent performance optimised for switch applications.
The FMS2003QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules.
It can also find use in other applications where high power and linear RF switching is necessary.
Electrical Specifications: Parameter Insertion Loss Return Loss (TAMBIENT = 25°C,Vctrl = 0V/2.
5V, ZIN = ZOUT = 50Ω) Test Conditions 0.
5 – 1.
0 GHz 1.
0 – 2.
0 GHz 0.
5 – 2.
5 GHz 0.
5 – 1.
0 GHz 1.
0 – 2.
0 GHz 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33dBm, 100% Duty Cycle 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33dBm, 100% Duty Cycle 10% to 90% RF 90% to 10% RF 0.
5 – 1.
0 GHz 1.
0 – 2.
0 GHz 0.
5 – 1.
0 GHz 1.
0 – 2.
0 GHz Tx1 836Hz Tx2 837MHz +21dBm Rx1 880MHz –25dBm Tx1 1879.
5MHz Tx2 1880.
5MHz +21dBm,Rx1 1960MHz –25dBm +35dBm RF input @1GHz Min Typ <0.
62 <0.
65 20 >30 >26 -69 -67 -69 -70 <0.
15 <0.
06 38 38 >65 >62 >110 Max Units dB dB dB dB dB dBc dBc dBc dBc µs µs dBm Isolation 2nd Harmonic Level 3rd Harmonic Level Switching speed : Trise, Tfall P0.
1dB IP3 dBm Cross modulation dBm µA Control Current <10 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0...


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