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FPD10000AF

Filtronic
Part Number FPD10000AF
Manufacturer Filtronic
Description 10W PACKAGED POWER PHEMT
Published May 11, 2007
Detailed Description PRELIMINARY • PERFORMANCE (1.8 GHz) ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dB...
Datasheet PDF File FPD10000AF PDF File

FPD10000AF
FPD10000AF

Overview
PRELIMINARY • PERFORMANCE (1.
8 GHz) ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website ♦ Usable Gain to 3.
8GHz DESCRIPTION AND APPLICATIONS FPD10000AF 10W PACKAGED POWER PHEMT SEE PACKAGE OUTLINE FOR MARKING CODE • The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band.
The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1dB Gain Compression Class B Operation Power Gain at dB Gain Compression Maximum Stable Ga...


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