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FPD1500P100

Part Number	FPD1500P100
Manufacturer	Filtronic
Description	1W PACKAGED POWER PHEMT
Published	May 11, 2007
Detailed Description	1W PACKAGED POWER PHEMT • FEATURES ♦ 29.5 dBm Linear Output Power ♦ 18 dB Power Gain at 2 GHz ♦ 10.5 dB Maximum Stable G...
Datasheet	FPD1500P100 PDF File

Overview

1W PACKAGED POWER PHEMT • FEATURES ♦ 29.
5 dBm Linear Output Power ♦ 18 dB Power Gain at 2 GHz ♦ 10.
5 dB Maximum Stable Gain at 10 GHz ♦ 39 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz FPD1500P100 • DESCRIPTION AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.
25 µm by 1500 µm Schottky barrier gate, defined by highresolution stepper-based photolithography.
The recessed and offset Gate structure minimizes parasitics to optimize performance.
The epitaxial structure and processing have been optimized for reliable high-power applications.
The FPD1500P100 also features Si3N4 passivation and is also available in die form and in the low cost plastic SOT89 and DFN plastic packages.
Typical applications include commercial and other narrowband and broadband high-performance amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital...

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FPD1500P100 1W PACKAGED POWER PHEMT - Filtronic

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