DatasheetsPDF.com

SPM6G080-060D

Part Number	SPM6G080-060D
Manufacturer	Sensitron
Description	Three-Phase IGBT BRIDGE
Published	May 11, 2007
Detailed Description	SENSITRON SEMICONDUCTOR TECHNICAL DATA Data Sheet 4098, Rev. D SPM6G080-060D Three-Phase IGBT BRIDGE, With Gate Driver...
Datasheet	SPM6G080-060D PDF File

Overview

SENSITRON SEMICONDUCTOR TECHNICAL DATA Data Sheet 4098, Rev.
D SPM6G080-060D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V www.
DataSheet4U.
com BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES O 600 - - V IC - - 80 70 A - - 170 +/-20 +/- 100 A V nA Zero Gate Voltage Collector Current VC...

Similar Datasheet

SPM6G080-060D Three-Phase IGBT BRIDGE - Sensitron

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)