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SPM6G120-120D

Part Number	SPM6G120-120D
Manufacturer	Sensitron
Description	Three-Phase IGBT BRIDGE
Published	May 11, 2007
Detailed Description	SENSITRON SEMICONDUCTOR TECHNICAL DATA SPM6G120-120D Data Sheet 4100 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver...
Datasheet	SPM6G120-120D PDF File

Overview

SENSITRON SEMICONDUCTOR TECHNICAL DATA SPM6G120-120D Data Sheet 4100 Rev.
- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10mS Zero Gate Voltage Collector Current (For the module) VCE = 1200 V, VGE=0V Ti=25oC VCE = 800 V, VGE=0V Ti=125oC www.
DataSheet4U.
com BVCES TC = 25 OC TC = 80 C ICM ICES O 1200 - - 120 80 180 V A A IC 2 15 TC = 25 OC TC = 125 C O mA mA V Collector to Emitter Saturation Voltage, IC = 80A, VGE = 15V, IGBT Internal Turn On Gate Resistance IGBT Internal Turn Off Gate Resistance VCE(SAT) - 1.
9 2.
2 30 10 100 10 2.
3 Ohm Ohm Ohm usec 20 0.
27 V/usec o IGBT Internal Soft Shutdown Turn Off Gate Resistance Short Circuit Time, Conditions ...

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SPM6G120-120D Three-Phase IGBT BRIDGE - Sensitron

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