DatasheetsPDF.com

SPM6M080-010D

Part Number	SPM6M080-010D
Manufacturer	Sensitron
Description	Three-Phase MOSFET BRIDGE
Published	May 11, 2007
Detailed Description	SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4118, Rev. C SPM6M080-010D Three-Phase MOSFET BRIDGE, With Gate Drive...
Datasheet	SPM6M080-010D PDF File

Overview

SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4118, Rev.
C SPM6M080-010D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain-to-Source Breakdown Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC O BVDSS ID IDM VGS IGSS ICSS 100 - - 80 70 200 +/-20 +/- 200 V A A V nA TC = 90 C Pulsed Drain Current, Pulse Width limited to 1 msec Gate to Source Voltage Gate- Source Leakage Current , VGE = +/-20V www.
DataSheet4U.
com Zero Gate Voltage Drain Current VDS = 100 V, VGS=0V Ti=25oC VDS= 80 V, VGS=0V Ti=125oC Static Drain-to-Source On Resistance, ID= 60A, VGS = 15V, Maximum Thermal Resistance Maximum operating Junction Temperature Maximum Storage Junction Temperature Tj = 25 C Tj = 150 C O O 1 3 RDSon 0.
009 0.
018 RθJC Tjmax Tjmax -40 -55 0.
012 0.
65 150 ...

Similar Datasheet

SPM6M080-010D Three-Phase MOSFET BRIDGE - Sensitron

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)