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EMC21L1004GN

Eudyna Devices
Part Number EMC21L1004GN
Manufacturer Eudyna Devices
Description High Voltage - High Power GaN-HEMT Power Amplifier Module
Published May 21, 2007
Detailed Description Eudyna GaN-HEMT 10W Preliminary FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB(typ.) at Pout=22dBm(Avg.) ...
Datasheet PDF File EMC21L1004GN PDF File

EMC21L1004GN
EMC21L1004GN

Overview
Eudyna GaN-HEMT 10W Preliminary FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.
5dB(typ.
) at Pout=22dBm(Avg.
) ・Broad Frequency Range : 2110 to 2170MHz ・Proven Reliability ・Small and Low Cost Metal Base Package EMC21L1004GN High Voltage - High Power GaN-HEMT Power Amplifier Module DESCRIPTION The EMC21L1004GN is a high-gain and wide-band 2-stage HIC amplifier module with 50V operation.
This module is targeted for high voltage, low current operation in digitally modulated base station.
This product is ideally suited not only for WCDMA base station amplifiers but also other HPA while offering ease for use.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC) Rating Item Symbol Vdd1,2 Vgg1,2 P in Tstg T op DC Input Voltage (Drain) DC Input Voltage (Gate) Input Power Storage Temperature Operating Case Temperature www.
DataSheet4U.
com RECOMMENDED OPERATING CONDITION (Case Temperature Tc= 25oC) Condition Item Symbol DC Input Voltage (Drain) DC Input Voltage (Gate) Input Power ...


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