DatasheetsPDF.com

CMM1200

Mimix Broadband
Part Number CMM1200
Manufacturer Mimix Broadband
Description GaAs MMIC Low Noise Amplifier
Published May 23, 2007
Detailed Description 2.0-6.0 GHz GaAs MMIC Low Noise Amplifier August 2006 - Rev 02-Aug-06 CMM1200 Chip Diagram 2.0 to 6.0 GHz GaAs MMIC Lo...
Datasheet PDF File CMM1200 PDF File

CMM1200
CMM1200

Overview
2.
0-6.
0 GHz GaAs MMIC Low Noise Amplifier August 2006 - Rev 02-Aug-06 CMM1200 Chip Diagram 2.
0 to 6.
0 GHz GaAs MMIC Low-Noise Amplifier Advanced Product Information May 2005 V1.
5 (1 of 5) Features Small Size: 1.
60 x 1.
55 x 0.
076 mm Integrated On-Chip Drain Bias Coil Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable – Fully Matched, Novel Feedback & Distributed Amplifier Design P1dB: 15.
5 dBm @ 6 GHz, Typ.
High Linear Gain: 17.
5 dB Typ.
Noise Figure: 3.
3 dB Typ.
@ 6 GHz pHEMT Technology Silicon Nitride Passivation Specifications (TA = 25°C, Vdd = 5V) 1 www.
DataSheet4U.
com Parameters Units Min Typ Max Frequency Range Linear Gain Gain Variation (over operating frequency) Power Output (@1 dB Gain Compression) P1dB Variation (over operating frequency) Saturated Output Power Third Order Intercept Point (@ 6 GHz) Second Order Intercept Point (@ 6 GHz) Noise Figure (@6 GHz) Input Return Loss 2 Output Return Loss 2 Current Thermal Resistance Stability Notes: 1.
Tested on Celeritek connectorized evaluation board.
2.
Measured on wafer.
GHz dB ±dB dBm dBm dBm dBm dBm dB dB dB mA °C/W 2.
0 16.
0 14.
0 19.
0 6.
0 17.
5 2.
0 15.
5 1.
0 23.
0 25.
5 41.
0 3.
3 85 Unconditionally Stable 100 34.
0 3.
8 -9.
5 -12.
0 115 Absolute Maximum Ratings 1 Parameter Rating Die Attach and Bonding Procedures Die Attach: Eutectic die attach is recommended.
For eutectic die attach: Preform: AuSn (80% Au, 20% Sn); Stage Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1 min or less.
Wire Bonding: Wire Size: 0.
7 to 1.
0 mil in diameter (prestressed); Thermocompression bonding is preferred over thermosonic bonding.
For thermocompression bonding: Stage Temperature: 250°C; Bond Tip Temperature: 150°C; Bonding Tip Pressure: 18 to 40 gms depending on size of wire.
Drain Voltage 4.
5V (min.
) / 8.
0V (max.
) Drain Current 150 mA Continuous Power Dissipation 1.
2 W Input Power 10 dBm Storage Temperature -50°C to +150°C Channel Temperature 175°C Operating Backside Temperature 2 -40°C...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)