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IRF1010NPBF

International Rectifier
Part Number IRF1010NPBF
Manufacturer International Rectifier
Description Power MOSFET
Published May 28, 2007
Detailed Description PD - 94966 IRF1010NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating ...
Datasheet PDF File IRF1010NPBF PDF File

IRF1010NPBF
IRF1010NPBF

Overview
PD - 94966 IRF1010NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l D VDSS = 55V RDS(on) = 11mΩ G S ID = 85A‡ Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally pre...


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