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IRF5210LPBF

International Rectifier
Part Number IRF5210LPBF
Manufacturer International Rectifier
Description Power MOSFET
Published May 28, 2007
Detailed Description l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Aval...
Datasheet PDF File IRF5210LPBF PDF File

IRF5210LPBF
IRF5210LPBF

Overview
l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Some Parameters are Different from IRF5210S/L l P-Channel l Lead-Free Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 60mΩ G S ID = -38A D D S D G D2Pak IRF5210SPbF S D G TO-262 IRF5210LPbF G Gate D Drain S Source Absolute Max...


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