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LP3000

Part Number	LP3000
Manufacturer	Filtronic Compound Semiconductors
Description	2W Power PHEMT
Published	Mar 22, 2005
Detailed Description	2 W POWER PHEMT • FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm ...
Datasheet	LP3000 PDF File

Overview

2 W POWER PHEMT • FEATURES ♦ 33.
5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.
5 dBm Output Power at 1-dB Compression at 3.
3V ♦ 45% Power-Added Efficiency DRAIN BOND PAD (4X) SOURCE BOND PAD (2x) GATE BOND PAD (4X) LP3000 • DESCRIPTION AND APPLICATIONS DIE SIZE: 28.
3X16.
5 mils (720x420 µm) DIE THICKNESS: 2.
6 mils (65 µm) BONDING PADS: 1.
9X2.
4 mils (50x60 µm) The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µ m by 3000 µ m Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and...

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