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LP3000SOT89

Filtronic Compound Semiconductors
Part Number LP3000SOT89
Manufacturer Filtronic Compound Semiconductors
Description LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
Published Mar 22, 2005
Detailed Description LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 1...
Datasheet PDF File LP3000SOT89 PDF File

LP3000SOT89
LP3000SOT89

Overview
LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression at 1.
8 GHz ♦ 15 dB Power Gain at 1.
8 GHz ♦ 1.
3 dB Noise Figure ♦ 46 dBm Output IP3 at 1.
8 GHz ♦ 55% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.
25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
The epitaxial structure and processing have been optimized for reliable high-power applicatio...


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