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IRF9956PBF

Part Number	IRF9956PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	May 30, 2007
Detailed Description	PD - 95259 IRF9956PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Moun...
Datasheet	IRF9956PBF PDF File

Overview

PD - 95259 IRF9956PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.
10Ω 3 6 4 5 Top View Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infra red, or wave soldering techniques.
Description SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25°C TA = 70°C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range 30 ± 20 3.
5 2.
8 16 1.
7 2.
0 1.
3 44 2.
0 0.
20 5.
0 -55 to + 150 A W mJ A mJ V/ ns °C Thermal Resistance Ratings Maximum Junction-to-Ambient Parameter Symbol RθJA Limit 62.
5 Units °C/W 09/21/04 IRF9956PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdow...

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IRF9956PBF HEXFET Power MOSFET - International Rectifier

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