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IRFS4410PbF

Part Number	IRFS4410PbF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	May 30, 2007
Detailed Description	PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uni...
Datasheet	IRFS4410PbF PDF File

Overview

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G S HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free VDSS RDS(on) typ.
max.
ID 100V 8.
0m: 10m: 88A S D G TO-220AB IRFB4410PbF S D G D2Pak IRFS4410PbF S D G TO-262 IRFSL4410PbF Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d l 63l 88 380 200 1.
3 Max.
Units A Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw l l W W/°C V V/ns °C f ± 20 19 -55 to + 175 300 10lb in (1.
1N m) 220 See Fig.
14, 15, 16a, 16b x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Ã e mJ A mJ Repetitive Avalanche Energy g Thermal Resistance Symbol RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 Junction-to-Ambient (PCB Mount) , D2Pak k Parameter Typ.
––– 0.
50 ––– ––– Max.
0.
61 ––– 62 40 l Units °C/W k jk www.
irf.
com 1 05/02/07 IRFB/S/SL4410PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Input Resistance Min.
Typ.
Max.
Units 100 ––– ––– 2.
0 ––– ––...

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IRFS4410PbF HEXFET Power MOSFET - International Rectifier

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