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IRFB4610

International Rectifier
Part Number IRFB4610
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published May 30, 2007
Detailed Description Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Datasheet PDF File IRFB4610 PDF File

IRFB4610
IRFB4610

Overview
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits G l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 96906C IRFB4610 IRFS4610 IRFSL4610 HEXFET® Power MOSFET D VDSS RDS(on) typ.
max.
S ID 100V 11m: 14m: 73A G DS TO-220AB IRFB4610 G DS D2Pak IRFS4610 G DS TO-262 IRFSL4610 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current f Maximum Power Dissipation Linear Derating Factor VGS dV/dt Gate-to-Source Voltage Peak Diode Recovery e TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d IAR Avalanche Current c EAR Repetitive Avalanche Energy f Thermal Resistance Symbol Parameter RθJC Junction-to-Case j RθCS Case-to-Sink, Flat Greased Surface , TO-220 RθJA Junction-to-Ambient, TO-220 j RθJA Junction-to-Ambient (PCB Mount) , D2Pak ij Max.
73 52 290 190 1.
3 ± 20 7.
6 -55 to + 175 300 10lbxin (1.
1Nxm) 370 See Fig.
14, 15, 16a, 16b, Typ.
––– 0.
50 ––– ––– Max.
0.
77 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W www.
irf.
com 1 5/22/08 IRF/B/S/SL4610 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient 100 ––– ––– V VGS = 0V, ID = 250μA ––– 0.
085 ––– V/°C Reference to 25°C, ID = 1mAc RDS(on) Static Drain-to-Source On-Resistance ––– 11 14 mΩ VGS = 10V, ID = 44A f VGS(th) Gate Threshold Voltage 2.
0 ––– 4.
0 V VDS = VGS, ID = 100μA IDSS Drain-...


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