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IRFIZ24EPBF

Part Number	IRFIZ24EPBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	May 30, 2007
Detailed Description	PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to L...
Datasheet	IRFIZ24EPBF PDF File

Overview

PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.
5KVRMS l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.
071Ω G S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The Fullpak is...

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IRFIZ24EPBF HEXFET Power MOSFET - International Rectifier

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