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IRFP22N60KPBF

International Rectifier
Part Number IRFP22N60KPBF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published May 30, 2007
Detailed Description IRFP22N60KPbF SMPS MOSFET Applications l Hard Switching Primary or PFS Switch l Switch Mode Power Supply (SMPS) l Uninte...
Datasheet PDF File IRFP22N60KPBF PDF File

IRFP22N60KPBF
IRFP22N60KPBF


Overview
IRFP22N60KPbF SMPS MOSFET Applications l Hard Switching Primary or PFS Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free l PD - 94876 HEXFET® Power MOSFET VDSS 600V RDS(on) typ.
240mΩ ID 22A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case ) TO-247AC Max.
22 14 88 370 2.
9 ± 30 15 -55 to + 150 300 Units A W W/°C V V/ns °C Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ.
––– ––– ––– Max.
380 22 37 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
––– 0.
24 ––– Max.
0.
34 ––– 40 Units °C/W www.
irf.
com 1 12/9/03 IRFP22N60KPbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective ...



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