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IRFP22N50A

International Rectifier
Part Number IRFP22N50A
Manufacturer International Rectifier
Description SMPS MOSFET
Published May 30, 2007
Detailed Description PD- 91833C SMPS MOSFET IRFP22N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l UninterruptIb...
Datasheet PDF File IRFP22N50A PDF File

IRFP22N50A
IRFP22N50A

Overview
PD- 91833C SMPS MOSFET IRFP22N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 500V RDS(on) max 0.
23Ω ID 22A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max.
22 14 88 277 2.
2 ± 30 4.
8 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies l l Full Bridge Converters Power Factor Correction Boost Notes  through … are on page 8 www.
irf.
com 1 12/15/99 IRFP22N50A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min.
Typ.
Max.
Units Conditions 500 ––– ––– V VGS = 0V, ID = 250µA ––– 0.
55 ––– V/°C Reference to 25°C, ID = 1mA† ––– ––– 0.
23 Ω VGS = 10V, ID = 13A „ 2.
0 ––– 4.
0 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 500V, VGS = 0V µA ––– ––– 250 VDS = 400V, VGS = 0V, T J = 125°C ––– ––– 100 VGS = ...


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