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IRFR3410PBF

Part Number	IRFR3410PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	May 30, 2007
Detailed Description	PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VD...
Datasheet	IRFR3410PBF PDF File

Overview

PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 100V RDS(on) max 39mΩ ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR3410 I-Pak IRFU3410 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C dv/dt TJ TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
100 ± 20 31 22 125 110 3.
0 0.
71 15 -55 to + 175 300 (1.
6mm from case ) Units V A W mW°C V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ.
––– ––– ––– Max.
1.
4 40 110 Units °C/W Notes through are on page 10 www.
irf.
com 1 12/03/04 IRFR/U3410PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
100 ––– ––– 2.
0 ––– ––– ––– ––– Typ.
––– 0.
11 34 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 39 m Ω VGS = 10V, ID = 18A 4.
0 V VDS = VGS, ID = 250µA 20 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 200 VGS = 20V nA -200 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconduct...

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IRFR3410PBF HEXFET Power MOSFET - International Rectifier

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