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IRG4PC30UDPBF

Part Number	IRG4PC30UDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	May 30, 2007
Detailed Description	PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Opt...
Datasheet	IRG4PC30UDPBF PDF File

Overview

PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free UltraFast CoPack IGBT C VCES = 600V G E VCE(on) typ.
= 1.
95V @VGE = 15V, IC = 12A n-channel Benefits Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application co...

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IRG4PC30UDPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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