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IRGB14C40L

International Rectifier
Part Number IRGB14C40L
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published May 30, 2007
Detailed Description PD - 93891A Ignition IGBT Features •Most Rugged in Industry •Logic-Level Gate Drive •> 6KV ESD Gate Protection •Low Sat...
Datasheet PDF File IRGB14C40L PDF File

IRGB14C40L
IRGB14C40L

Overview
PD - 93891A Ignition IGBT Features •Most Rugged in Industry •Logic-Level Gate Drive •> 6KV ESD Gate Protection •Low Saturation Voltage •High Self-clamped Inductive Switching Energy The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits.
Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits.
Absolute Maximum Ratings Parameter Max Clamped 20 14 1 10 Clamped 125 54 - 40 to 175 - 40 to 175 6 11.
5 Unit V A A mA IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector IRGS14C40L IRGSL14C40L IRGB14C40L •BVCES = 370V min, 430V max •IC @ TC = 110°C = 14A •VCE(on) typ= 1.
2V @7A @25°C • IL(min)=11.
5A @25°C,L=4.
7mH Gate R1 R2 Description Emitter JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB IRGS14C40L IRGSL14C40L IRGB14C40L NOTE: IRGS14C40L is available in tape and reel.
Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.
e, IRGS14C40LTRR or IRGS14C40LTRL.
Condition RG = 1K ohm VGE = 5V VGE = 5V VCES IC @ TC = 25°C IC @ TC = 110°C IG IGp VGE PD @ TC = 25°C TJ TSTG VESD IL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Continuous Gate Current Peak Gate Current Gate-to-Emitter Voltage Maximum Power Dissipation mA tPK = 1ms, f = 100Hz V W W °C °C KV C = 100pF, R = 1.
5K ohm A L = 4.
7mH, T = 25°C PD @ T = 110°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Electrostatic Voltage Self-clamped Inductive Switching Current Thermal Resistance Parameter Min Typ Max 1.
2 40 °C/W Unit RθJC RθJA ZθJC www.
irf.
com Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mounted, Steady State) Transient Thermal Impedance, Juction-to-Case (Fig.
11) Page 1 4/7/2000...


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