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IRGB4B60KD1PBF

International Rectifier
Part Number IRGB4B60KD1PBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published May 30, 2007
Detailed Description PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • Low VCE (on) Non P...
Datasheet PDF File IRGB4B60KD1PBF PDF File

IRGB4B60KD1PBF
IRGB4B60KD1PBF

Overview
PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.
6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ.
= 2.
1V Benefits • Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak TO-220 IRGB4B60KD1PbF IRGS4B60KD1 TO-262 IRGSL4B60KD1 Absolute Maximum Ratings Parameter V...


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