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IRGSL8B60K

International Rectifier
Part Number IRGSL8B60K
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published May 30, 2007
Detailed Description PD - 94545C INSULATED GATE BIPOLAR TRANSISTOR Features • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Sho...
Datasheet PDF File IRGSL8B60K PDF File

IRGSL8B60K
IRGSL8B60K

Overview
PD - 94545C INSULATED GATE BIPOLAR TRANSISTOR Features • • • • Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
C IRGB8B60K IRGS8B60K IRGSL8B60K VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel VCE(on) typ.
= 1.
8V TO-220AB IRGB8B60K D2Pak IRGS8B60K TO-262 IRGSL8B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous C...


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