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IRL610A

Fairchild Semiconductor
Part Number IRL610A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published May 30, 2007
Detailed Description $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ ...
Datasheet PDF File IRL610A PDF File

IRL610A
IRL610A

Overview
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 200V ♦ Lower RDS(ON):1.
185Ω (Typ.
) 1 2 3 IRL610A BVDSS = 200 V RDS(on) = 0.
046Ω ID = 3.
3 A TO-220 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissi...


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